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Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm

HongKong Double Light Electronics Technology Co. Ltd
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Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm

Brand Name : Double Light
Model Number : DL-HP20SIRA-1SIR120
Certification : ISO9001:2008,ROHS
Place of Origin : China (mainland)
MOQ : 10,000pcs
Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability : 15,000,000pcs per Day
Delivery Time : 5-7 working days after received your payment
Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Product Name : High Power Infrared LED
Diameter : LED Infrared
Emitted Color : Infrared LED
Peak Emission Wavelength : 730nm
Chip Material : GaAlAs
Lens Type : Water Clear
Forward Voltage @20ma : 1.4-1.8V
Viewing Angle : 120 Deg
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Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm


High Power Infrared Emitting Diode

  1.  Features:
    1. Very long operating life (up to 100k hours).
    2. Available in white, green, blue, red, yellow.
    3. More energy efficient than incandescent and most halogen lamps.
    4. Low voltage DC operated.
    5. Cool beam, safe to the touch.
    6. Instant light (less than 100 ns).
    7. The product itself will remain within RoHS compliant Version.

     Applications:
    1. Reading lights (car, bus, aircraft).
    2. Portable (flashlight, bicycle).
    3. Mini_accent/Uplighters/Downlighters/Orientation.
    4. Bollards/Security/Garden.
    5. Cove/Undershelf/Task.
    6. Automotive rear combination lamps.
    7. Traffic signaling/Beacons/ Rail crossing and Wayside.
    8. Indoor/Outdoor Commercial and Residential Architectural.
    9. Edge_lit signs (Exit, point of sale).
    10. LCD Backlights/Light Guides.


  1. Absolute Maximum Ratings at Ta=25℃
  2. ParametersSymbolRatingUnits
    Forward CurrentIF500mA
    Peak Pulse Current (tp≤100μs, Duty cycle=0.25)I pulse700mA
    Reverse VoltageVR5V
    LED Junction TemperatureTj125
    Operating Temperature RangeTopr-40 to +80
    Storage Temperature RangeTstg-40 to +100
    Soldering Time at 260℃ (Max.)Tsol5Seconds

    Notes:

  3. Proper current derating must be observed to maintain junction temperature below the maximum.
  4. LEDs are not designed to be driven in reserve bias.

  5. Electrical Optical Characteristics at Ta=25℃

    ParametersSymbolMin.Typ.Max.UnitTest Condition
    Viewing Angle [1]1/2---120--DegIF=350mA
    Forward Voltage [2]VF1.6---2.2VIF=350mA
    Reverse CurrentIR------10µAVR=5V
    Peak Emission Wavelengthλp---730---nmIF=350mA
    Dominant Wavelengthλd----730----nmIF =350mA
    Spectrum Radiation BandwidthΔλ---10---nmIF=350mA
    Power IntensityPv160---240mwIF=350mA

    Notes:

  6. 2θ1/2 is the off axis angle from lamp centerline where the luminous intensity is 1/2 of the peak value.
  7. Forward Voltage measurement tolerance : ±0.1V

  8. Notes:

    1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

    2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.


Infrared Emitting Diode Package Dimension:


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