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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

HongKong Double Light Electronics Technology Co. Ltd
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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Brand Name : Double Light
Model Number : DL-583PTDA-1PTD10
Certification : ISO9001:2008,ROHS
Place of Origin : China (mainland)
MOQ : 10,000pcs
Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability : 15,000,000pcs per Day
Delivery Time : 5-7 working days after received your payment
Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Product Name : LED Phototransistor
Diameter : Dip 5mm
Emitted Color : Phototransistor
Peak Emission Wavelength : 940nm
Chip Material : Silicon
Lens Type : Water Clear
Forward Voltage @20ma : 1.1-1.4V
Viewing Angle : 50 Deg
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LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor


5mm LED Phototransistor

  1. Features:
  1. 5mm round standard t-1 3/4 package.
  2. Fast response time.
  3. High photo sensitivity.
  4. Small junction capacitance.
  5. The product itself will remain within RoHS compliant Version.

  1. Descriptions:
  1. The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
  2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

  1. Applications:
  1. Infrared applied system.
  2. Optoelectronic automatic control system.
  3. Optoelectronic switch.
  4. Camera.
  5. Printer.
  6. Counters and sorters.
  7. Encoders.
  8. Floppy disk drive.
  9. Video camera, tape and card readers.
  10. Position sensors.

  1. Absolute Maximum Ratings at Ta=25℃
ParametersSymbolRatingUnit
Power DissipationPD75mW
Collector-Emitter VoltageVCEO30V
Emitter-Collector-VoltageVECO5V
Collector CurrentIC20mA
Operating TemperatureTOPR-40 to +85
Storage TemperatureTSTG-40 to +100
Lead Soldering TemperatureTSOL260℃

Electrical Optical Characteristics at Ta=25℃

ParametersSymbolMin.Typ.Max.UnitCondition
Collector-Emitter Breakdown VoltageBVCEO30------V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown VoltageBVECO5------V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation VoltageVCE(SAT)------0.40V

IC=0.70mA,

Ee=1mW/cm2

Collector Dark CurrentICEO------100nA

Ee=0mW/cm²,

VCE=20V

On-State Collector CurrentIC(ON)0.702.00---mA

Ee=1mW/cm²,

VCE=5V

Optical Rise Time (10% to 90%)TR---15---μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%)TF---15---
Reception Angle1/2---10---Deg
Wavelength Of Peak SensitivityλP---940---nm
Rang Of Spectral Bandwidthλ0.5700---1200nm

Infrared Emitting Diode Package Dimension:


Product Tags:

940nm infrared led

      

ir emitting diode

      
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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED Images

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